Photodetectors based on heterostructures for opto-electronic applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 10, 2003, Pages 2063-2072

  Nabet, Bahram ^a   Cola, Adriano ^b   Cataldo, Andrea ^c   Chen, Xiying ^a,d   Quaranta, Fabio ^b  

^a Drexel University   (United States)

^b CNR   (Italy)

^c UNIVERSITY OF SALENTO   (Italy)

^d Mosel Vitelic Corporation   (United States)

Author keywords

Distribute Bragg reflector; Heterojunction; Heterostructure metal semiconductor metal (MSM); High electron mobility; Photodetector; Resonant cavity enhanced (RCE); Schottky contact; Two dimensional electron gas (2 DEG)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED OPTOELECTRONICS; MATHEMATICAL MODELS; MIRRORS; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

DISTRIBUTED BRAGG REFLECTOR; PHOTOELECTRONS; RESONANT OPTICAL CAVITY; SCHOTTKY BARRIER HEIGHT;

PHOTODETECTORS;

EID: 0141952891     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.817463     Document Type: Article

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