Effect of post-deposition processing on ZnO thin films and devices

Journal of Electronic Materials

Volumn 39, Issue 5, 2010, Pages 568-572

  Yen, Tingfang ^a   Haungs, Alan ^a   Kim, Sung Jin ^a   Cartwright, Alexander ^a   Anderson, Wayne A ^a  

^a State University of New York   (United States)

Author keywords

Annealing; Detector; Nitrogen; Sputtering; Thin film; ZnO

Indexed keywords

CURRENT TRANSPORT MECHANISM; FEMTOSECOND PULSE; METAL SEMICONDUCTOR METAL PHOTODETECTOR; POST ANNEALING; POST-DEPOSITION; RADIO FREQUENCY MAGNETRON SPUTTERING; RESPONSIVITY; SPACE-CHARGE-LIMITED; ZNO; ZNO FILMS; ZNO THIN FILM;

ELECTROMAGNETIC PULSE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HETEROJUNCTIONS; ION IMPLANTATION; MAGNETRON SPUTTERING; METAL ANALYSIS; METALLIC FILMS; OPTICAL FILMS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

DEPOSITION;

EID: 77954624642     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0999-5     Document Type: Conference Paper

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