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Journal of the Electrochemical Society

Volumn 157, Issue 9, 2010, Pages

Laterally grown n-ZnO nanowire/p-GaN heterojunction light emitting diodes

(5) Weng, Wen Yin a Chang, Shoou Jinn a Hsu, Cheng Liang b Chang, Sheng Po a Hsueh, Ting Jen c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL UNIVERSITY OF TAINAN (Taiwan)

c NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; DEFECT-RELATED EMISSION; EMISSION PEAKS; HETEROSTRUCTURES; P-N JUNCTION; PATTERNED SUBSTRATES; ROOM TEMPERATURE; SINGLE-STEP METHOD; ZNO; ZNO NANOWIRES;

CURRENT VOLTAGE CHARACTERISTICS; DISTILLATION; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOWIRES; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 77955823820 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3459933 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.