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Thin Solid Films

Volumn 519, Issue 20, 2011, Pages 6920-6927

Rapid thermal-plasma annealing of ZnO:Al films for silicon thin-film solar cells

(6) Ohta, N a Ohba, D a Sato, S a Tang, Z a Shimizu, H a,b Shirai, H a

a SAITAMA UNIVERSITY (Japan)

b Saitama Industrial Technology Center (Japan)

Author keywords

Metastability of oxygen atoms; Plasma annealing; Si thin film solar cells; Solid phase crystallization; ZnO; ZnO:Al

Indexed keywords

A-SI LAYERS; A-SI:H; AL-DOPED ZNO; AMORPHOUS SILICON (A-SI); AZO FILMS; BORON-DOPED; CAPPING LAYER; IMPURITIES IN; INTERMIXING LAYER; OXYGEN ATOM; PLASMA ANNEALING; RADIO FREQUENCIES; SAMPLE SURFACE; SOLID PHASE CRYSTALLIZATION; SURFACE TEMPERATURES; THERMAL PLASMA JETS; THIN-FILM SOLAR CELLS; X-RAY PHOTOEMISSIONS; ZNO; ZNO FILMS; ZNO:AL FILMS;

ALUMINUM; AMORPHOUS SILICON; ATMOSPHERIC PRESSURE; BORON; CRYSTALLIZATION; METALLIC FILMS; MULTILAYERS; OPTICAL FILMS; PHOSPHORUS; PLASMAS; RAPID THERMAL ANNEALING; SELF ASSEMBLY; SILICON; X RAY DIFFRACTION; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 80051552784 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.04.043 Document Type: Conference Paper

Times cited : (23)

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