Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing

Microelectronic Engineering

Volumn 88, Issue 9, 2011, Pages 3020-3023

  Zhang, Zefang ^a,b,c   Yan, Weixia ^a,b,c   Zhang, Lei ^a,b,c   Liu, Weili ^a,c   Song, Zhitang ^a,c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b Shanghai Xinanna Electronic Technology Co Ltd   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

CMP; Friction force; Mechanical process parameters; MRR; Sapphire

Indexed keywords

CMP; COEFFICIENT OF FRICTIONS; DOWN FORCE; FRICTION BEHAVIOR; FRICTION FORCE; MATERIAL REMOVAL; MATERIAL REMOVAL RATE; MECHANICAL PROCESS; MRR; PRESTON EQUATIONS; ROTATION SPEED; SAPPHIRE SUBSTRATES;

FRICTION; POLISHING; ROTATION; SAPPHIRE; SPEED; STRIPPING (REMOVAL); TRIBOLOGY;

CHEMICAL MECHANICAL POLISHING;

EID: 80051552028     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.04.068     Document Type: Article

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