Effect of abrasive particle concentration on preliminary chemical mechanical polishing of glass substrate

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2168-2172

  Zhang, Zefang ^a,b,c   Liu, Weili ^a,b   Song, Zhitang ^a,b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b Shanghai Xinanna Electronic Technology Co Ltd   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Abrasive particle concentration; CMP; COF; Glass substrate; MRR per particle

Indexed keywords

ABRASIVE CONCENTRATION; ABRASIVE PARTICLES; COEFFICIENT OF FRICTIONS; GLASS SUBSTRATES; GLASS SURFACES; IN-SITU; MATERIAL REMOVAL RATE; PARTICLE CONCENTRATIONS; POLISHING PROCESSS; ROOT MEAN SQUARE; SOLID CONCENTRATIONS; SURFACE QUALITIES;

ABRASIVES; CHEMICAL MECHANICAL POLISHING; CONCENTRATION (PROCESS); GLASS; POLISHING; POLYETHYLENES; SLURRIES; SUBSTRATES; ZETA POTENTIAL;

CHEMICAL POLISHING;

EID: 77955518661     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.01.020     Document Type: Article

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