Chemical mechanical polishing and a succedent reactive ion etching processing of sapphire wafer

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Wang, Liangyong ^a   Zhang, Kailiang ^a   Song, Zhitang ^a   Feng, Songlin ^a  

^a UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CARBIDE; CHEMICAL MECHANICAL POLISHING; REACTIVE ION ETCHING; SAPPHIRE; SLURRIES;

CERIA ABRASIVES; MATERIAL REMOVAL; MIXED ABRASIVES SLURRIES (MAS); ROOT MEAN SQUARE;

SINGLE CRYSTALS;

EID: 33846966714     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2424417     Document Type: Article

References (15)

1. D.-P. Kim, J.-W. Yeo, and C.-I. Kim, Thin Solid Films, 459, 122 (2004).
2. H. Zhu, L. A. Tessarotob, R. Sabiac, V. A. Greenhut, M. Smith, and D. E. Niesz, Appl. Surf. Sci., 236, 120 (2004).
3. C. H. Jeong, D. W. Kim, H. Y. Lee, H. S. Kim, Y. J. Sung, and G. Y. Yeom, Surf. Coat. Technol., 171, 280 (2003).
4. R. Sabia, V. A. Greenhut, and C. G. Pantano, Ceram. Trans., 102 (1999).
5. Y. Wang, S. Liu, G. Peng, S. Zhou, and J. Xu, J. Cryst. Growth, 274, 241 (2005).
6. J. Wang, B. Tan, Z. Zhao, W. Li, and J. Zhou, Electronics Process Technology, 26, 228 (2005).
7. A. Jindal, S. Hegde, and S. V. Babu, J. Electrochem. Soc., 150, G314 (2003).
8. L. M. Cook, J. Non-Cryst. Solids, 120, 152 (1990).
9. H.-G. Kang, M.-Y. Lee, H.-S. Park, U. Paik, and J.-G. Park, Jpn. J. Appl. Phys., Part 1, 44, 4752 (2005).
10. P. D. Williams and D. D. Hawn, J. Am. Ceram. Soc., 74, 1614 (1991).
11. Y.-J. Seo, W.-S. Lee, and P. Yeh, Microelectron. Eng., 75, 361 (2004).
12. Z. Lu, N. P. Ryde, S. V. Babu, and E. Matjevic, Langmuir, 21, 9866 (2005).
13. Handbook of Physics and Chemistry, 77th ed., pp. 4-37, CRC Press, New York (1996).
14. P. W. Leech, J. Vac. Sci. Technol. A, 16, 2037 (1998).
15. J. B. Fedison, T. P. Chow, H. Lu, and I. B. Bhat, J. Electrochem. Soc., 144, L221 (1997).