Double layer SiNx:H films for passivation and anti-reflection coating of c-Si solar cells

Thin Solid Films

Volumn 519, Issue 20, 2011, Pages 6887-6891

  Ko, Jisoo ^a   Gong, Daeyeong ^a   Pillai, Krishnakumar ^a   Lee, Kong Soo ^a   Ju, Minkyu ^a   Choi, Pyungho ^a   Kim, Kwang Ryul ^a   Yi, Junsin ^a   Choi, Byoungdeog ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Anti reflection coating (ARC); Passivation; PECVD; Silicon nitride; Solar cell

Indexed keywords

ANTI-REFLECTION; BOTTOM LAYERS; C-SI SOLAR CELL; COST EFFECTIVE; DOUBLE LAYER ANTI-REFLECTION COATINGS; DOUBLE LAYERS; GAS RATIO; HIGH QUALITY; HYDROGEN CONCENTRATION; INNOVATIVE APPROACHES; OPTICAL CHARACTERISTICS; P-TYPE; TRANSMITTANCE MEASUREMENTS; TWO LAYERS;

CARRIER CONCENTRATION; CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; COATINGS; LIGHT REFRACTION; NANOSTRUCTURED MATERIALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON SOLAR CELLS; SILICON WAFERS;

PASSIVATION;

EID: 80051548555     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.078     Document Type: Conference Paper

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