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Materials Research Society Symposium Proceedings

Volumn 1144, Issue , 2009, Pages 117-122

Modelling of the oxidation of suspended silicon nanowires

(7) Fazzini, P F a Bonafos, C a Hubert, A b Colonna, J P b Ernst, T b Respaud, M c Gloux, F a

a UNIVERSITÉ DE TOULOUSE (France)

b CEA LETI (France)

c Institut National des Sciences Appliquées (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURVED SURFACES; CYLINDRICAL GEOMETRY; ELECTRON MICROSCOPY IMAGES; MODEL PREDICTION; OXIDATION RATES; OXIDE GROWTH; SELF-LIMITED; SI NANOWIRE; SILICON NANOWIRES; STRESS EFFECTS; WET AND DRY;

ELECTRIC WIRE; IMAGE PROCESSING; OXIDATION;

NANOWIRES;

EID: 70450060054 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

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