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Volumn 92, Issue 23, 2004, Pages

Two-dimensional electron-hole liquid in single Si quantum wells with large electronic and dielectric confinement

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; CRYSTALLINE MATERIALS; DIELECTRIC DEVICES; HETEROJUNCTIONS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OXIDATION; QUANTUM THEORY; SEMICONDUCTING SILICON;

EID: 3242681811     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.236802     Document Type: Article
Times cited : (48)

References (17)
  • 10
    • 85088489322 scopus 로고    scopus 로고
    • note
    • sub) line (see Fig. 1).
  • 11
    • 85032428664 scopus 로고    scopus 로고
    • note
    • We found numerically the energy difference between the maximum peak position of a 2D EHP and the renormalized band gap is half of the Fermi level of electrons and holes.
  • 15
    • 85088489772 scopus 로고    scopus 로고
    • note
    • z variations of the excited zone leading to energy band-gap variations.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.