An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector

IEEE Sensors Journal

Volumn 11, Issue 9, 2011, Pages 1795-1799

  Weng, W Y ^a   Hsueh, T J ^b   Chang, S J ^a   Hung, S C ^c   Huang, G J ^a   Hsueh, H T ^a   Huang, Z D ^a   Chiu, C J ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c SHIH CHIEN UNIVERSITY   (Taiwan)

Author keywords

(AlxGa1 x)2O 3; Ga2O3; UV photodetectors

Indexed keywords

(ALXGA1-X)2O 3; ALGAN; EXTERNAL QUANTUM EFFICIENCY; HIGH TEMPERATURE; METAL SEMICONDUCTOR METAL; REJECTION RATIOS; UV PHOTODETECTORS; VACUUM ULTRAVIOLETS;

FABRICATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

ALUMINUM;

EID: 79960981605     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2011.2104947     Document Type: Article

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