On charge transport and low-frequency noise in the GaN p-i-n diode

IEEE Journal of Quantum Electronics

Volumn 43, Issue 2, 2007, Pages 188-195

  Dobrzanski, Lech ^a   Strupinski, Wlodek ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Gan algan; Low frequency noise; Space charge limited (scl); Ultraviolet detector

Indexed keywords

1/F NOISE; ALGAN; CHARGE TRANSPORT; CRYOGENIC CONDITIONS; DEPTH DISTRIBUTION; DIRECT TUNNELING; FORWARD BIAS; FRENKEL EFFECT; IV CHARACTERISTICS; LORENTZIAN NOISE; LOW-FREQUENCY NOISE; MULTIPLE CHARGE; PIN DIODE; POWER LAW; REVERSE BIAS; SPACE CHARGE LIMITED CURRENTS; TEMPERATURE RANGE; TUNNELING CURRENT;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; THERMAL NOISE; TUNNELING (EXCAVATION); ULTRAVIOLET DETECTORS; WIND TUNNELS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77949461031     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.889052     Document Type: Article

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