Current understanding of the transport behavior of hydrogen species in MOS stacks and their relation to reliability degradation

ECS Transactions

Volumn 35, Issue 4, 2011, Pages 55-72

  Liu, Ziyuan ^a   Fujieda, Shinji ^b   Ishigaki, Hirokazu ^a   Wilde, Markus ^c   Fukutani, Katsuyuki ^c  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b NEC CORPORATION   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILING; DIELECTRIC MATERIALS; LOW-K DIELECTRIC; NITRIDES; NUCLEAR REACTIONS; SILICA; SILICON NITRIDE; SILICON OXIDES;

COMPREHENSIVE MODEL; DEVICE DEGRADATION; DEVICE INSTABILITIES; DEVICE RELIABILITY; INTERFACIAL STORAGES; NEAR SURFACE REGIONS; NUCLEAR REACTION ANALYSIS; RELIABILITY DEGRADATION;

SEMICONDUCTING SILICON;

EID: 79960882223     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3572275     Document Type: Conference Paper

References (42)

1. A. Toriumi and H. Satake, in Mat. Res. Soc. Sym. Proceedings, Boston, 592, p. 323 (1999).
2. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, M. Harmatz, W. R. Buchwald, and N. M. Johnson, J. Electrochem. Soc. 136, 2609 (1989).
3. D. K. Schrodera and J. A. Babcock, J. Appl. Phys. 94, 1 (2003).
4. C. E. Blat, E. H. Nicollian, and E. H. Poindexter, J. Appl. Phys. 69, 1712 (1991).
5. C. R. Helms and E. H. Poindexter, Rep. Prog. Phys., 57, 791 (1994).
6. Y. Nissan-Cohen and T. Gorczyca,, IEEE Electron Dev. Letter, 9, 287 (1988).
7. L. Dori, J. H. Stathis and J. A. Tornello, J. Appl. Phys. 70, 1510 (1991).
8. P. E. Nicollian, C. N. Berglund, P. F. Schmidt and J. M. Andrews, J. Appl. Phys. 42, 5654 (1971).
9. P. E. Nicollian, A. T. Krishnan, C. A. Chancellor, R. B. Khamankar, S. Chakravarthi, C. Bowen and V. K. Reddy, in Proc. 46th Int. Reliab. Phys. Symp., p. 197 (2007).
10. D. J. DiMaria, Appl. Phys. Lett., 51, 463 (1987).
11. J. W. Lyding, K. Hess and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996).
12. S. Tsujikawa, T. Mine, K. Watanabe, Y. Shimamoto, R. Tsuchiya, K. Ohnishi, T. Onai, J. Yugami and S. Kimura, in Proc. 41th Int. Reliab. Phys. Symp., p.183 (2003).
13. S. Ogawa and N. Shiono, Phys. Rev. B 51, 4218 (1995).
14. Horiuchi, in Tech. Dig. Symp. VLSI Technol., p. 92 (2000).
15. Y. Ohji, Y. Nishioka, K. Yokogawa, K. Mukai, Q. Qiu, E. Arai and T. Sugano, in Proc. 38th Int. Reliab. Phys. Symp., p. 82 (1989).
16. N. S. Saks, D. B. Brown and R. W. Rendell, IEEE Trans. Nucl. Sci. NS-38, 1130 (1991).
17. S. Shuto, M. Tanaka, M. Sonoda, T. Idaka, K. Sasaki, and S. Mori, in Proc 36th Int. Reliab. Phys. Symp., p. 17 (1997).
18. Z. Liu, S. Fujieda, F. Hayashi, M. Shimizu, M. Nakata, H. Ishigaki, M. Wilde, and K. Fukutani, in Proc. 46th Int. Reliab. Phys. Symp., p. 190 (2007).
19. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, and T. Horiuchi, in Tech. Dig. Symp. VLSI Technol., p. 92 (2000).
20. J. Jee, W. Kwon, W. Lee, J. Park, H. Kim, H. Son, W. Chang, J. Han, Y. Hyung and H. Lee, in Proc. 46th Int. Reliab. Phys. Symp., p. 184 (2007).
21. Y. Okada, P. Tobin, V. Lakhotia, W. Feil, S. Ajuria and R. Hegde, Appl. Phys. Lett., 63, 194 (1993).
22. C. Chen, Y. Fang, S. Ting, W. Hsieh, C Yang, T. Hsu, M. Yu, T. Lee, S. Chen, C. Yu, and M. Liang, IEEE Transactions on Electron Dev., 49, 840 (2002).
23. D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, S. Kikuchi, K. Sakuma, Y. Mitani, K. Eguchi and M. Takayanagi, in Tech. Dig. Int. Electron Device Meeting, p. 847 (2005).
24. R. Gale, F. J. Feigl, C. W. Magee and D. R. Toung, J. Appl. Phys., 54, 6938 (1983).
25. D. A. Buchanan, A. D. Marwick, and D. J. DiMaria, L. Dori, J. Appl. Phys. 76, 3595 (1994).
26. F. H. P. M. Habraken, R. H. G. Tijhaar, W. F. van der Weg, A. E. T. Kuiper, and M. F. C. Willemsen, J. Appl. Phys., 59, 447 (1986).
27. M. Wilde, M. Matsumoto, K. Fukutani, Z. Liu, K. Ando, Y. Kawashima and S. Fujieda, J. Appl. Phys., 92, 4320 (2002).
28. M. A. Briere and D. Braunig, IEEE Trans. Nuclear Science, 37, 1658 (1990).
29. Z. Liu, S. Ito, S. Koyama, M. Makabe, M. Wildeand K. Fukutani, in Proc. 49th Int. Reliab. Phys. Symp., p. 417 (2010).
30. Z. Liu, T. Saito, T. Matsuda, K Ando, S. Ito, M. Wilde and K. Fukutani, in Proc. 47th Int. Reliab. Phys. Symp., 705 (2008).
31. K. Fukutani, H. Iwai, Y. Murata, and H. Yamashita, Phys. Rev. B, 59, 1 (1999).
32. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff and G. Hollinger, Phys. Rev., B38, 6084 (1988).
33. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett., 71, 3844 (1997).
34. P. K. Roy, Y. Chen and S. Chetlur, IEEE Trans. Electron Devices, 48, 2016 (2001).
35. J. Stathis, J. Appl. Phys., 77, 6205 (1995).
36. Z. Liu, S. Fujieda, K. Terashima, M. Wilde and K. Fukutani, Appl. Phys. Lett. 81, 2397 (2002).
37. G. Rosenman, M. Naich, Ya. Roizin and Rob van Schaijk, J. Appl. Phys. 99, 023702 (2006).
38. Z. Liu, S. Ito, M. Wilde, K. Fukutani, I. Hirozawa, and T. Koganezawa, Appl. Phys. Lett., 92, 192115 (2008).
39. H. Du, R. E. Tressler, K. E. Spear, and C. G. Pantano, J. Electrochem. Soc., 136, 1527 (1989).
40. B. Maiti, M. Y. Hao, I. Lee, and J. C. Lee, Appl. Phys. Lett., 61, 1790 (1992).
41. N. Novkovski, I, Aizenberg, E. Goin, E. Fullin and M. Dutoit, Appl. Phys. Lett., 54, 2408 (1989).
42. Z. Liu, S. Ito, T. Ide, M. Nakata, H. Ishigaki, M. Makabe, M. Wilde, K. Fukutani, H. Mitoh and Y. Kamigaki, in Proc. 48th Int. Reliab. Phys. Symp., p. 902 (2009).