Hydrogen redistribution induced by negative-bias-temperature stress in metal-oxide-silicon diodes

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2397-2399

  Liu, Ziyuan ^a   Fujieda, Shinji ^a   Terashima, Koichi ^a   Wilde, Markus ^b   Fukutani, Katsuyuki ^b  

^a NEC CORPORATION   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN ACCUMULATION; INTERFACE STATE; NUCLEAR REACTION ANALYSIS; OXIDE LAYER; POST-OXIDATION; WET OXIDATION;

DIODES; HYDROGEN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956049210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1508809     Document Type: Article

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