Deep traps in oxide-nitride-oxide stacks fabricated from hydrogen and deuterium containing precursors

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Rosenman, G ^a   Naich, M ^a   Roizin, Ya ^b   Van Schaijk, Rob ^c  

^a TEL AVIV UNIVERSITY   (Israel)

^b TOWER SEMICONDUCTOR LTD   (Israel)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP TRAPS; ENERGY SPECTRUM;

ACTIVATION ENERGY; DEUTERIUM; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; NITRIDES; THERMODYNAMIC STABILITY; VIBRATION MEASUREMENT;

OXIDES;

EID: 31744452265     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2161416     Document Type: Article

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