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Physica Status Solidi (B) Basic Research

Volumn 248, Issue 8, 2011, Pages 1908-1914

Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC(0001)

(5) Vesapuisto, E a Kim, W a Novikov, S a Lipsanen, H a Kuivalainen, P a

a AALTO UNIVERSITY (Finland)

Author keywords

AES; AFM; Graphene; Hall effect; SiC

Indexed keywords

EID: 79960878359 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.201046368 Document Type: Article

Times cited : (13)

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