Modeling and simulation of high-κ gate GaSb nanowire field effect transistor for ultra high speed and low power applications

ECS Transactions

Volumn 35, Issue 3, 2011, Pages 121-136

  Jahangir, I ^a   Jahangir, S ^b   Khosru, Q D M ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PROFILES; DEVICE PARAMETERS; DIRECT TUNNELING; ENERGY DELAY PRODUCT; GATE BIAS; GATE CAPACITANCE; GATE DELAYS; GATE LENGTH; GATE-LEAKAGE CURRENT; LOW POWER APPLICATION; MODELING AND SIMULATION; NUMERICAL MODELS; ULTRA HIGH SPEED;

CAPACITANCE; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GALLIUM; GRAPHENE; INDIUM ANTIMONIDES; LEAKAGE CURRENTS; NANOWIRES; TWO DIMENSIONAL;

GALLIUM ALLOYS;

EID: 79960805209     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3569905     Document Type: Conference Paper

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