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Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

Scanning capacitance spectroscopy on n+-p asymmetrical junctions in multicrystalline Si solar cells

(4) Jiang, C S a Heath, J T a,b Moutinho, H R a Al Jassim, M M a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b LINFIELD COLLEGE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VALUES; CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE CURVE; ELECTRICAL JUNCTIONS; LOCAL MINIMUMS; MULTI-CRYSTALLINE SILICON SOLAR CELLS; MULTICRYSTALLINE SI; SCANNING CAPACITANCE SPECTROSCOPY;

CAPACITANCE MEASUREMENT; POLYSILICON; SILICON SOLAR CELLS;

CAPACITANCE;

EID: 79960542544 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3605507 Document Type: Article

Times cited : (14)

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