Modeling of static electrical properties in organic field-effect transistors

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Xu, Yong ^a   Minari, Takeo ^b,c   Tsukagoshi, Kazuhito ^b,d   Gwoziecki, Romain ^e   Coppard, Romain ^e   Benwadih, Mohamed ^e   Chroboczek, Jan ^a   Balestra, Francis ^a   Ghibaudo, Gerard ^a  

^a IMEP LAHC   (France)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c RIKEN   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELING; ELECTRICAL CHARACTERISTIC; EXPERIMENTAL DATA; FREE SURFACES; GATE BIAS; I-V MEASUREMENTS; IV CHARACTERISTICS; ORGANIC TRANSISTOR; PENTACENES; POISSON'S EQUATION; POTENTIAL PROFILES; SUBTHRESHOLD REGION;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; POISSON EQUATION; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79960533267     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3602997     Document Type: Article

References (37)

1. R. A. Street, D. Knipp, and A. R. Volkel, Appl. Phys. Lett. 80, 1658 (2002). 10.1063/1.1456549 (Pubitemid 34268863)
2. N Karl, Synth. Met. 133, 649 (2003). 10.1016/S0379-6779(02)00398-3
3. G. Horowitz and P. Delannoy, J. Appl.Phys. 70, 469 (1991). 10.1063/1.350250
4. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, J. Appl. Phys. 88, 6594 (2000). 10.1063/1.1323534
5. E. Calvetti, L. Colalongo, and Z. M. Kovacs-Vajna, Solid-State Electron. 49, 567 (2005). 10.1016/j.sse.2005.01.006 (Pubitemid 40226841)
6. P. Stallinga and H. L. Gomes, Synth. Met. 156, 1305 (2006). 10.1016/j.synthmet.2006.09.015 (Pubitemid 46186824)
7. P. Stallinga and H. L. Gomes, Synth. Met. 156, 1316 (2006). 10.1016/j.synthmet.2006.09.008 (Pubitemid 46186823)
8. D. Gupta, N. Jeon, and S. Yoo, Org. Electron. 9, 1026 (2008). 10.1016/j.orgel.2008.08.005
9. L. Li, M. Debucquoy, J. Genoe, and P. Heremans, J. Appl. Phys. 107, 024519 (2010). 10.1063/1.3294617
10. G. Horowitz, R. Hajlaoui, H. Bouchriha, R. Bourguiga, and M. Hajlaoui, Adv. Mater. 10, 923 (1998). 10.1002/(SICI)1521-4095(199808)10:121.0.CO;2-#
11. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000). 10.1063/1.373091
12. G. Horowitz and M. E. Hajlaoui, Synth. Met. 122, 185 (2001). 10.1016/S0379-6779(00)01351-5 (Pubitemid 32875580)
13. D. Natali, L. Fumagalli, and M. Sampietro, J. Appl. Phys. 101, 014501 (2007). 10.1063/1.2402349 (Pubitemid 46120696)
14. O Marinov, M. J. Deen, and B. Iniguez, IEE Proc.: Circuits, Devices Syst. 152, 189 (2005). 10.1049/ip-cds:20045076 (Pubitemid 41130303)
15. Y. Taur, IEEE Trans. Electron Devices 48, 2861 (2001). 10.1109/16.974719 (Pubitemid 34091900)
16. N. Tessler and Y. Roichman, Appl. Phys. Lett. 79, 2987 (2001). 10.1063/1.1415374 (Pubitemid 33608122)
17. S. Scheinert, K. P. Pernstich, B. Batlogg, and G. Paasch, J. Appl. Phys. 102, 104503 (2007). 10.1063/1.2803742 (Pubitemid 350199486)
18. S. C. Lo, Y. M. Li, and S. M. Yu, Math. Comput. Modell. 46, 180 (2007). 10.1016/j.mcm.2006.12.018 (Pubitemid 46660520)
19. Y. Xu, T. Minari, K. Tsukagoshi, J. A. Chroboczek, and G. Ghibaudo, J. Appl. Phys. 107, 114507 (2010). 10.1063/1.3432716
20. F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini, and D. M. de Leeuw, Phys. Rev. Lett. 92, 116802 (2004). 10.1103/PhysRevLett.92.116802
21. G. Horowitz, J. Mater. Res. 19, 1946 (2004). 10.1557/JMR.2004.0266
22. T. Richards and H. Sirringhaus, Appl. Phys. Lett. 92, 023512 (2008). 10.1063/1.2825584
23. Y. Xu, T. Minari, K. Tsukagoshi, J. A. Chroboczek, F. Balestra, and G. Ghibaudo, Solid-State Electron. 61, 106 (2011). 10.1016/j.sse.2011.01.002
24. D. Boudinet, M. Benwadih, S. Altazin, R. Gwoziecki, J. M. Verilhac, R. Coppard, G. Le Blevennec, I. Chartier, and G. Horowitz, Org. Electron. 11, 291 (2010). 10.1016/j.orgel.2009.11.008
25. M. D. Jacunski, M. S. Shur, and M. Hack, IEEE Trans. Electron Devices 43, 1433 (1996). 10.1109/16.535329
26. S. Scheinert and W. Schliefke, Synth. Met. 139, 501 (2003). 10.1016/S0379-6779(03)00205-4
27. D. Braga and G. Horowitz, Appl. Phys. A 95, 193 (2009). 10.1007/s00339-008-5008-y
28. C. G. Sodini, T. W. Ekstedt, and J. L. Moll, Solid-State Electron. 25, 833 (1982). 10.1016/0038-1101(82)90170-8
29. J. A. Letizia, J. Rivnay, A. Facchetti, M. A. Ratner, and T. J. Marks, Adv. Funct. Mater. 20, 50 (2010). 10.1002/adfm.200900831
30. M. Fiebig, D. Beckmeier, and B. Nickel, Appl. Phys. Lett. 96, 083304 (2010). 10.1063/1.3309685
31. W. L. Kalb, S. Haas, C. Krellner, T. Mathis, and B. Batlogg, Phys. Rev. B 81, 155315 (2010). 10.1103/PhysRevB.81.155315
32. S. Scheinert, G. Paasch, M. Schrodner, H. K. Roth, S. Sensfuss, and T. Doll, J. Appl. Phys. 92, 330 (2002). 10.1063/1.1486253 (Pubitemid 34783318)
33. C. Erlen and P. Lugli, IEEE Trans. Electron Devices 56, 546 (2009). 10.1109/TED.2008.2011936
34. A. R. Volkel, R. A. Street, and D. Knipp, Phys. Rev. B 66, 195336 (2002). 10.1103/PhysRevB.66.195336
35. FlexPDE finite element model builder for Partial Differential Equations http://www.pdesolutions.com.
36. J. Veres, S. Ogier, G. Lloyd, and D. de Leeuw, Chemi. Mater. 16, 4543 (2004). 10.1021/cm049598q
37. Y. Xu, M. Benwadih, R. Gwoziecki, R. Coppard, T. Minari, C. Liu, K. Tsukagoshi, J. A. Chroboczek, F. Balestra, and G. Ghibaudo, A transport study of carrier mobility in organic field-effect transistors, Journal of Applied Physics (submitted).