메뉴 건너뛰기




Volumn 49, Issue 4, 2005, Pages 567-577

Organic thin film transistors: A DC/dynamic analytical model

Author keywords

Analytical model; Circuit simulation; DC; Organic thin film transistors; Time dependent; Variable range hopping

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; COMPUTER AIDED DESIGN; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; SMART CARDS; SPIN COATING;

EID: 13644256233     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.006     Document Type: Article
Times cited : (65)

References (14)
  • 2
    • 0043190025 scopus 로고    scopus 로고
    • Field-effect transistors made from solution-processed organic semiconductors
    • A.R. Brown Field-effect transistors made from solution-processed organic semiconductors Synth Met 88 1997 37 55
    • (1997) Synth Met , vol.88 , pp. 37-55
    • Brown, A.R.1
  • 3
    • 21544438828 scopus 로고
    • An analytical model for short-channel organic thin-film transistors
    • L. Torsi, A. Dodabalapur, and H.E. Katz An analytical model for short-channel organic thin-film transistors J Appl Phys 78 2 1995 1088
    • (1995) J Appl Phys , vol.78 , Issue.2 , pp. 1088
    • Torsi, L.1    Dodabalapur, A.2    Katz, H.E.3
  • 4
    • 36449006085 scopus 로고
    • An analytical model for organic-based thin-film transistors
    • G. Horowitz, and P. Delannoy An analytical model for organic-based thin-film transistors J Appl Phys 70 1 1991 469
    • (1991) J Appl Phys , vol.70 , Issue.1 , pp. 469
    • Horowitz, G.1    Delannoy, P.2
  • 5
    • 0000589058 scopus 로고    scopus 로고
    • Modeling of organic thin film transistors of different designs
    • P.V. Necliudov, M.S. Shur, D.J. Gundlach, and T.N. Jackson Modeling of organic thin film transistors of different designs J Appl Phys 88 11 2000 6594
    • (2000) J Appl Phys , vol.88 , Issue.11 , pp. 6594
    • Necliudov, P.V.1    Shur, M.S.2    Gundlach, D.J.3    Jackson, T.N.4
  • 7
    • 0031588639 scopus 로고    scopus 로고
    • Transport in a-sexthiopene films
    • M.W. Wu, and E.M. Gonwell Transport in a-sexthiopene films Chem Phys Lett 266 1997 363 367
    • (1997) Chem Phys Lett , vol.266 , pp. 363-367
    • Wu, M.W.1    Gonwell, E.M.2
  • 8
    • 0000606264 scopus 로고    scopus 로고
    • Theory of the field-effect mobility in amorphous organic transistors
    • M.C.J.M. Vissenberg, and M. Matters Theory of the field-effect mobility in amorphous organic transistors Phys Rev B 57 1998 12964 12967
    • (1998) Phys Rev B , vol.57 , pp. 12964-12967
    • Vissenberg, M.C.J.M.1    Matters, M.2
  • 9
  • 11
    • 13644266923 scopus 로고
    • Analytical modeling of the mos transistor for the electrical simulation of integrated circuits
    • G. Baccarani Elsevier
    • C. Turchetti, M. Conti, and G. Masetti Analytical modeling of the mos transistor for the electrical simulation of integrated circuits G. Baccarani Process and device modeling for microelectronics 1993 Elsevier
    • (1993) Process and Device Modeling for Microelectronics
    • Turchetti, C.1    Conti, M.2    Masetti, G.3
  • 12
    • 0028463724 scopus 로고
    • An analytical a-si:h tft dc/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states
    • S. Chen, and J.B. Kuo An analytical a-si:h tft dc/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states IEEE Trans Electron Dev 41 7 1994 1169 1178
    • (1994) IEEE Trans Electron Dev , vol.41 , Issue.7 , pp. 1169-1178
    • Chen, S.1    Kuo, J.B.2
  • 13
    • 0018027059 scopus 로고
    • A charge-oriented model for mos transistor capacitances
    • D.E. Ward, and R.W. Button A charge-oriented model for mos transistor capacitances IEEE J Solid State Circ SC-13 5 1978 703 708
    • (1978) IEEE J Solid State Circ , vol.SC-13 , Issue.5 , pp. 703-708
    • Ward, D.E.1    Button, R.W.2
  • 14
    • 0020834178 scopus 로고
    • On the small-signal behaviour of the mos transistor in quasistatic operation
    • C. Turchetti, G. Masetti, and Y. Tsividis On the small-signal behaviour of the mos transistor in quasistatic operation Solid State Electron 26 10 1983 941 949
    • (1983) Solid State Electron , vol.26 , Issue.10 , pp. 941-949
    • Turchetti, C.1    Masetti, G.2    Tsividis, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.