Silicon spintronics at room temperature

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7760, Issue , 2010, Pages

  Dash, S P ^a   Sharma, S ^a   Le Breton, J C ^a   Jansen, R ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Electrical spin injection; Hanle effect; Room temperature; Silicon spintronics; Spin polarized tunneling

Indexed keywords

AMBIENT TEMPERATURES; CONTROL EXPERIMENTS; ELECTRICAL DETECTION; ELECTRICAL INJECTION; ELECTRICAL SPIN INJECTION; ELECTRONIC MATERIALS; FERROMAGNETS; HANLE EFFECT; HANLE EFFECTS; INFORMATION PROCESSING DEVICES; NANO LAYERS; NONMAGNETICS; P-TYPE SILICON; ROOM TEMPERATURE; SEMICONDUCTOR CHANNELS; SILICON DEVICES; SPIN INJECTION; SPIN MANIPULATION; SPIN TRANSPORT; SPIN-ACCUMULATIONS; SPIN-POLARIZED CARRIERS; SPIN-POLARIZED TUNNELING; SPINTRONICS; SPURIOUS SIGNALS; TERMINAL GEOMETRY; TUNNEL BARRIER; TUNNEL CONTACTS;

DATA PROCESSING; DETECTORS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; SIGNAL DETECTION;

NANOTECHNOLOGY;

EID: 77958113059     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.860150     Document Type: Conference Paper

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