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Volumn , Issue , 2009, Pages 350-354

Three dimensional interconnects with high aspect ratio TSVs and fine pitch solder microbumps

Author keywords

[No Author keywords available]

Indexed keywords

FINE PITCH; HIGH ASPECT RATIO; HIGH DENSITY; MICRO-BUMPS; SI CHIPS; THREE DIMENSIONAL (3D) INTERCONNECTS; THROUGH SILICON VIAS; UNDER-BUMP METALLURGIES;

EID: 70349659227     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2009.5074039     Document Type: Conference Paper
Times cited : (55)

References (12)
  • 1
    • 47349100893 scopus 로고    scopus 로고
    • Package technology to address the memory bandwidth challenge for tera-scale computing
    • Hu G., Kalyanam H., Krishnamoorthy and Polka L., "Package Technology to Address the Memory Bandwidth Challenge for Tera-scale Computing," Intel Technology Journal, Vol.11, No.3 (2007), pp. 197-206.
    • (2007) Intel Technology Journal , vol.11 , Issue.3 , pp. 197-206
    • Hu, G.1    Krishnamoorthy, K.H.2    Polka, L.3
  • 2
    • 25844453501 scopus 로고    scopus 로고
    • Development of next-gereration system-on-acage (SOP) technology based on silicon carriers with fine-pitch interconnection
    • Knickerbocker, J. U. et al, "Development of next-gereration system-on-acage (SOP) technology based on silicon carriers with fine-pitch interconnection," IBM J. Res. Dev. Vol. 49, No. 4/5 (2005), pp. 725-754.
    • (2005) IBM J. Res. Dev. , vol.49 , Issue.4-5 , pp. 725-754
    • Knickerbocker, J.U.1
  • 10
    • 0032753082 scopus 로고    scopus 로고
    • Characterization of time multiplexed inductively coupled plasma etcher
    • Ayon A. A. et al, "Characterization of time multiplexed inductively coupled plasma etcher," J. Electrochem. Soc., Vol.146, 1999 pp. 339-349.
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 339-349
    • Ayon, A.A.1
  • 11
    • 0036601273 scopus 로고    scopus 로고
    • Effect of process parameters on the surface morphology and mechanical performance of silicon surfaces after deep reactive ion etching (DRIE)
    • Chen K. S., Ayon A. A., Zhang X and Spearing S. M., "Effect of process parameters on the surface morphology and mechanical performance of silicon surfaces after deep reactive ion etching (DRIE)," J. Microelectromech. Syst., Vol11, 2002 pp. 264-275.
    • (2002) J. Microelectromech. Syst. , vol.11 , pp. 264-275
    • Chen, K.S.1    Ayon, A.A.2    Zhang, X.3    Spearing, S.M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.