An investigation on InxGa1-xN/GaN multiple quantum well solar cells

Journal of Physics D: Applied Physics

Volumn 44, Issue 26, 2011, Pages

  Deng, Qingwen ^a   Wang, Xiaoliang ^a,b   Xiao, Hongling ^a   Wang, Cuimei ^a   Yin, Haibo ^a   Chen, Hong ^a   Hou, Qifeng ^a   Lin, Defeng ^a   Li, Jinmin ^a,b   Wang, Zhanguo ^a   Hou, Xun ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b ISCAS XJTU Joint Laboratory of Functional Materials and Devices for Informatics   (China)

Author keywords

[No Author keywords available]

Indexed keywords

IDEAL DIODES; INDIUM CONTENT; MANUFACTURING TECHNOLOGIES; MATERIAL QUALITY; QUANTUM WELL;

CONVERSION EFFICIENCY; EFFICIENCY; GALLIUM; INDIUM; MANUFACTURE; NANOSTRUCTURED MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79960264940     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/26/265103     Document Type: Article

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