Simulation of In0.65Ga0.35 N single-junction solar cell

Journal of Physics D: Applied Physics

Volumn 40, Issue 23, 2007, Pages 7335-7338

  Zhang, Xiaobin ^a   Wang, Xiaoliang ^b   Xiao, Hongling ^b   Yang, Cuibai ^b   Ran, Junxue ^b   Wang, Cuimei ^b   Hou, Qifeng ^b   Li, Jinmin ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; INDIUM COMPOUNDS; THICKNESS MEASUREMENT;

OPTIMUM EFFICIENCY; THICK N-LAYER; THICK P-LAYER;

SOLAR CELLS;

EID: 36349029102     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/23/013     Document Type: Article

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