Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers

Journal of Luminescence

Volumn 121, Issue 2 SPEC. ISS., 2006, Pages 238-241

  Wora Adeola, G ^a   Rinnert, H ^a   Miska, P ^a   Vergnat, M ^a  

^a INSTITUT JEAN LAMOUR   (France)

Author keywords

Erbium doping; Multilayers; Photoluminescence; Silicon nanocrystals

Indexed keywords

ANNEALING; ERBIUM; IONS; MULTILAYERS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; THICKNESS CONTROL;

ERBIUM DOPING; LUMINESCENCE INTENSITY; PHOTOLUMINESCENCE EMISSION; SILICON NANOCRYSTALS;

SILICA;

EID: 33750416023     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.07.019     Document Type: Article

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