Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

Vacuum

Volumn 84, Issue 1, 2009, Pages 137-140

  Csik, A ^a   Serenyi M ^b   Erdelyi Z ^c   Nemcsics, A ^b   Cserhati, C ^c   Langer, G A ^c   Beke, D L ^c   Frigeri, C ^d   Simon, A ^a  

^a INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c UNIVERSITY OF DEBRECEN   (Hungary)

^d IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELASTIC RECOIL DETECTION ANALYSIS; FIRST ORDER; FLOW-RATE; GAS BUBBLE; H-CONTENT; HYDROGEN CONCENTRATION; RF-SPUTTERING; SEM; SI AND GE LAYERS; SI/GE MULTILAYER; SMALL ANGLE X-RAY DIFFRACTIONS; STRUCTURAL CHANGE; TEM; THERMAL STABILITY;

DANGLING BONDS; DESORPTION; GERMANIUM; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; PASSIVATION; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

MULTILAYERS;

EID: 69249213469     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.04.021     Document Type: Article

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