SiNx/a-SiCx:H passivation layers for p- and n-type crystalline silicon wafers

Thin Solid Films

Volumn 516, Issue 7, 2008, Pages 1569-1573

  Coscia, U ^a   Ambrosone, G ^a   Rava, P ^b   Rivolo, P ^b   Ferrazza, F ^c   Serenelli, L ^d   De Iuliis, S ^d   Tucci, M ^d  

^a Dipartimento di Scienze Fisiche   (Italy)

^b Elettrorava Spa   (Italy)

^c ENI S P A   (Italy)

^d ENEA C R CASACCIA   (Italy)

Author keywords

Passivation; Silicon nitride; Silicon carbon

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CHARGE; PASSIVATION; POSITIVE IONS; SURFACE TREATMENT;

POSITIVE CHARGE; SILICON-CARBON; SURFACE PASSIVATION;

SILICON NITRIDE;

EID: 38749142222     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.071     Document Type: Article

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