Low-temperature growth of polycrystalline SiC by catalytic CVD from monomethylsilane

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 41-44

  Kaneko, T ^a   Hosokawa, Y ^a   Suga, T ^a   Miyakawa, N ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Catalytic CVD; Monomethylsilane; Polycrystalline SiC

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; SCHOTTKY BARRIER DIODES;

CATALYTIC CVD; MONOMETHYLSILANE; POLYCRYSTALLINE SIC;

SILICON CARBIDE;

EID: 30344461895     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.052     Document Type: Conference Paper

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