Effect of hydrogen radical annealing on SiN passivated solar cells

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 599-606

  Muramatsu, Shin Ichi ^a   Uematsu, Tsuyoshi ^b   Ohtsuka, Hiroyuki ^b   Yazawa, Yoshiaki ^b   Warabisako, Terunori ^b   Nagayoshi, Hiroshi ^c   Kamisako, Kouichi ^d  

^a HITACHI CABLE LTD   (Japan)

^b HITACHI LTD   (Japan)

^c SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^d TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FILMS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON NITRIDE; SUBSTRATES; SURFACE STRUCTURE; TRIODES;

CELL EFFICIENCY; DOUBLE LAYER STRUCTURE; HYDROGEN RADICAL ANNEALING; SILICON NITRIDE FILMS; SURFACE RECOMBINATION VELOCITY;

SILICON SOLAR CELLS;

EID: 0035194977     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00147-1     Document Type: Article

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