-
1
-
-
38749146896
-
-
NPAHBY 1749-4885,. 10.1038/nphoton.2007.293
-
A. Khan, K. Balakrishnan, and T. Katona, Nat. Photonics NPAHBY 1749-4885 2, 77 (2008). 10.1038/nphoton.2007.293
-
(2008)
Nat. Photonics
, vol.2
, pp. 77
-
-
Khan, A.1
Balakrishnan, K.2
Katona, T.3
-
2
-
-
33745627020
-
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
-
DOI 10.1038/nature04760, PII NATURE04760
-
Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) NATUAS 0028-0836 441, 325 (2006). 10.1038/nature04760 (Pubitemid 44050193)
-
(2006)
Nature
, vol.441
, Issue.7091
, pp. 325-328
-
-
Taniyasu, Y.1
Kasu, M.2
Makimoto, T.3
-
3
-
-
77954831770
-
-
PRBMDO 0163-1829,. 10.1103/PhysRevB.81.035303
-
M. F. Schubert, Phys. Rev. B PRBMDO 0163-1829 81, 035303 (2010). 10.1103/PhysRevB.81.035303
-
(2010)
Phys. Rev. B
, vol.81
, pp. 035303
-
-
Schubert, M.F.1
-
4
-
-
0002538560
-
-
in, edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York)
-
V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev, and A. Zubrilov, in Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (Wiley, New York, 2001), pp. 1-30.
-
(2001)
Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe
, pp. 1-30
-
-
Bougrov, V.1
Levinshtein, M.E.2
Rumyantsev, S.L.3
Zubrilov, A.4
-
5
-
-
0042879606
-
-
APPLAB 0003-6951,. 10.1063/1.1594833
-
K. B. Nam, M. K. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. APPLAB 0003-6951 83, 878 (2003). 10.1063/1.1594833
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 878
-
-
Nam, K.B.1
Nakarmi, M.K.2
Li, J.3
Lin, J.Y.4
Jiang, H.X.5
-
6
-
-
84872315947
-
-
in, edited by J. Piprek (Wiley-CCH, Weinheim), 10.1002/9783527610723.ch2
-
I. Vurgaftman and J. R. Meyer, in Nitride Semiconductor Devices: Principles and Simulation, edited by, J. Piprek, (Wiley-CCH, Weinheim, 2007), pp. 13-48. 10.1002/9783527610723.ch2
-
(2007)
Nitride Semiconductor Devices: Principles and Simulation
, pp. 13-48
-
-
Vurgaftman, I.1
Meyer, J.R.2
-
7
-
-
0035927047
-
Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
-
DOI 10.1063/1.1374483
-
S. -R. Jeon, Y. -H. Song, H. -J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, Appl. Phys. Lett. APPLAB 0003-6951 78, 3265 (2001). 10.1063/1.1374483 (Pubitemid 33611533)
-
(2001)
Applied Physics Letters
, vol.78
, Issue.21
, pp. 3265-3267
-
-
Jeon, S.-R.1
Song, Y.-H.2
Jang, H.-J.3
Yang, G.M.4
Hwang, S.W.5
Son, S.J.6
-
8
-
-
0035956158
-
Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
-
DOI 10.1063/1.1415405
-
M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figel, and T. Takeuchi, Appl. Phys. Lett. APPLAB 0003-6951 79, 3720 (2001). 10.1063/1.1415405 (Pubitemid 33665915)
-
(2001)
Applied Physics Letters
, vol.79
, Issue.22
, pp. 3720-3722
-
-
Diagne, M.1
He, Y.2
Zhou, H.3
Makarona, E.4
Nurmikko, A.V.5
Han, J.6
Waldrip, K.E.7
Figiel, J.J.8
Takeuchi, T.9
Krames, M.10
-
9
-
-
0038614800
-
-
EDLEDZ 0741-3106,. 10.1109/LED.2003.809533
-
C. -M. Lee, C. -C. Chuo, I. -L. Chen, J. -C. Chang, and J. -I. Chyi, IEEE Electron Device Lett. EDLEDZ 0741-3106 24, 156 (2003). 10.1109/LED.2003.809533
-
(2003)
IEEE Electron Device Lett.
, vol.24
, pp. 156
-
-
Lee, C.-M.1
Chuo, C.-C.2
Chen, I.-L.3
Chang, J.-C.4
Chyi, J.-I.5
-
10
-
-
70449704492
-
-
APPLAB 0003-6951,. 10.1063/1.3258488
-
M. F. Schubert, Q. Dai, J. Xu, J. K. Kim, and E. F. Schubert, Appl. Phys. Lett. APPLAB 0003-6951 95, 191105 (2009). 10.1063/1.3258488
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 191105
-
-
Schubert, M.F.1
Dai, Q.2
Xu, J.3
Kim, J.K.4
Schubert, E.F.5
-
11
-
-
0001131930
-
-
PRBMDO 0163-1829,. 10.1103/PhysRevB.54.5675
-
Y. X. Liu, D. Z.-Y. Ting, and T. C. McGill, Phys. Rev. B PRBMDO 0163-1829 54, 5675 (1996). 10.1103/PhysRevB.54.5675
-
(1996)
Phys. Rev. B
, vol.54
, pp. 5675
-
-
Liu, Y.X.1
Ting, D.Z.-Y.2
McGill, T.C.3
-
12
-
-
0242367224
-
-
JAPIAU 0021-8979,. 10.1063/1.1606114
-
C. Rivas, R. Lake, W. Frensley, G. Klimeck, P. E. Thompson, K. D. Hobart, S. L. Rommel, and P. R. Berger, J. Appl. Phys. JAPIAU 0021-8979 94, 5005 (2003). 10.1063/1.1606114
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 5005
-
-
Rivas, C.1
Lake, R.2
Frensley, W.3
Klimeck, G.4
Thompson, P.E.5
Hobart, K.D.6
Rommel, S.L.7
Berger, P.R.8
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