Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes

Thin Solid Films

Volumn 446, Issue 1, 2004, Pages 106-110

  Sochacki, Mariusz ^a   Szmidt, Jan ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Aluminium nitride; Aluminium oxide; Schottky barrier; Silicon carbide

Indexed keywords

ALUMINUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ENERGY GAP; EXTRAPOLATION; HIGH TEMPERATURE EFFECTS; HYDROGEN BONDS; LATTICE CONSTANTS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REDUCTION; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SURFACE PHENOMENA;

ELECTRON CHARGE; SURFACE LEAKAGE; SURFACE STATES;

DIELECTRIC FILMS;

EID: 0347412024     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01202-1     Document Type: Article

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