Simulation of ZnO diodes for application in non-volatile crossbar memories

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 146-150

  Pra, Michele ^a   Csaba, György ^a   Erlen, Christoph ^a   Lugli, Paolo ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Non volatile memories; Passive memories; ZnO rectifying junctions

Indexed keywords

COMPUTER NETWORKS; DIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ZINC COMPOUNDS; SILICON; TECHNOLOGY; ZINC ALLOYS; ZINC OXIDE;

COMPUTATIONAL STUDIES; NON-VOLATILE MEMORIES; PASSIVE MEMORIES; SCHOTTKY DIODES; ZNO RECTIFYING JUNCTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50949120968     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-007-0167-1     Document Type: Article

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