Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 7, 2011, Pages 223-225

  Wang, H J ^a,c   Zou, C W ^b   Zhou, L ^a   Tian, C X ^a   Lee, M K ^c   Lee, J C ^c   Kang, T W ^c   Fu, D J ^a  

^a WUHAN UNIVERSITY   (China)

^b LINGNAN NORMAL UNIVERSITY   (China)

^c Dongguk University   (South Korea)

Author keywords

Bipolar devices; Resistive switching; RRAM; ZnO

Indexed keywords

BIPOLAR DEVICE; CONDUCTION MECHANISM; CONDUCTIVE FILAMENTS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NANOWIRE NETWORKS; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; OHMIC BEHAVIOR; POTENTIAL APPLICATIONS; RESISTIVE SWITCHING; RRAM; SPACE CHARGE LIMITED CURRENTS; SWITCHING MECHANISM; TRANSPORT MECHANISM; ZNO; ZNO NANOWIRES;

ELECTRIC PROPERTIES; ELECTRIC WIRE; NANOWIRES; NONVOLATILE STORAGE; OXYGEN VACANCIES; ZINC OXIDE;

RANDOM ACCESS STORAGE;

EID: 79959965515     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105146     Document Type: Article

References (20)

1. A. Sawa, Mater. Today 11, 28 (2008).
2. R. Waser and M. Aono, Nature Mater. 6, 833 (2007).
3. G. I. Meijer, Science 319, 1625 (2008).
4. J. J. Yang, M. D. Pickett, X. M. Li, D. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nature Nanotechnol. 3, 429 (2008).
5. J. J. Huang, C. W. Kuo, W. C. Chang, and T. H. Hou, Appl. Phys. Lett. 96, 262901 (2010).
6. J. Ventura, J. P. Araujo, J. B. Sousa, Y. Liu, Z. Zhang, and P. P. Freitas, Appl. Phys. Lett. 96, 043505 (2010).
7. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Stei- ner, Prog. Mater. Sci. 50, 293 (2005).
8. Z. L. Wang and J. H. Song, Science 312, 242 (2006).
9. X. D. Wang, J. Zhou, J. H. Song, J. Liu, N. S. Xu, and Z. L. Wang, Nano Lett. 6, 2768 (2006).
10. D. I. Son, C. H. You, W. T. Kim, J. H. Jung, and T. W. Kim, Appl. Phys. Lett. 94, 132103 (2009).
11. N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. 92, 232112 (2008).
12. S. Lee, H. Kim, D.-J. Yun, S.-W. Rhee, and K. Yong, Appl. Phys. Lett. 95, 262113 (2009).
13. J. W. Seo, J.-W. Park, K. S. Lim, J.-H. Yang, and S. J. Kang, Appl. Phys. Lett. 93, 223505 (2008).
14. W. Y. Chang, C. A. Lin, J. H. He, and T. B. Wu, Appl. Phys. Lett. 96, 242109 (2010).
15. L. Liao, H. D. Liu, J. C. Li, C. Liu, Q. Fu, and M. S. Ye, Appl. Surf. Sci. 240, 175 (2005).
16. D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nature Nanotechnol. 5, 148 (2010).
17. C. H. Tu, Y. S. Lai, and D. L. Kwong, IEEE Electron Device Lett. 27, 354 (2006).
18. D. C. Look and B. Claflin, Phys. Status Solidi B 241, 624 (2004).
19. X. Liu, X. Wu, H. Cao, and R. P. H. Chang, J. Appl. Phys. 95, 3141 (2004).
20. Z. L. Tseng, P. C. Kao, M. F. Shih, H. H. Huang, J. Y. Wang, and S. Y. Chu, Appl. Phys. Lett. 97, 212103 (2010).