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Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

Probing atomic rearrangement events in resistive switching nanostructures

(6) Ventura, J a Araujo, J P a Sousa, J B a Liu, Y a Zhang, Z a Freitas, P P a

a UNIVERSITY OF PORTO (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC REARRANGEMENTS; COMPLEX SIGNAL; CURRENT LEADS; DIFFERENT PROCESS; ELECTRICAL RESISTANCES; FLUCTUATORS; HIGH TEMPERATURE; LOW TEMPERATURES; METAL-INSULATOR-METAL STRUCTURES; NON-VOLATILE MEMORIES; RESISTANCE VARIATIONS; RESISTIVE SWITCHING; SWITCHING STAGE; TIME EVOLUTIONS;

METAL INSULATOR BOUNDARIES; NANOSTRUCTURES; SOIL CONSERVATION; SWITCHING SYSTEMS; TANTALUM;

SWITCHING;

EID: 75749139799 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3298365 Document Type: Article

Times cited : (8)

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