Optimization of implant and anneal processes

18th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2010

Volumn , Issue , 2010, Pages 86-89

  Prussin, S ^a   Reyes, J ^a   Onoda, H ^b   Hamamoto, N ^b   Nagayama, T ^b   Tanjyo, M ^b   Umisedo, S ^b   Kawamura, Y ^b   Hashimoto, M ^b   Koga, Y ^b   Maehara, N ^b   Nakashima, Y ^b   Yoshimi, H ^b   Sezaki, S ^b   Current, Michael ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NISSIN ION EQUIPMENT CO LTD   (Japan)

^c Current Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL PROCESS; ANNEALING PROCESS; DOPING PROCESS; EFFECT EVALUATION; FIGURE OF MERIT;

HALL EFFECT; MAGNETIC FIELD EFFECTS; OPTIMIZATION; RAPID THERMAL ANNEALING;

SEMICONDUCTOR DOPING;

EID: 78650462577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2010.5623787     Document Type: Conference Paper

References (1)

1. S. Prussin et al. "The Mobility of Boron In Silicon" IIT 2010