Redistribution of dopant during microwave annealing of a multilayer structure for production p-n junction

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Pankratov, E L ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); MULTILAYERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DISTRIBUTION;

DOPANT REDISTRIBUTION; INHOMOGENEITY; MICROWAVE ANNEALING; SHARPNESS;

MICROWAVES;

EID: 41549153822     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2887989     Document Type: Article

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