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Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 2, 2011, Pages

First-principles simulation on piezoresistivity in alpha and beta silicon carbide nanosheets

(3) Nakamura, Koichi a Toriyama, Toshiyuki a Sugiyama, Susumu a

a RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES SIMULATIONS; GAUGE FACTORS; HIGH TEMPERATURE; NEGATIVE VALUES; PIEZORESISTIVE PROPERTIES; PIEZORESISTIVITY; ROOM TEMPERATURE; SENSOR APPLICATIONS; STRAIN GAUGE FACTOR; TEMPERATURE RISE; TWO-DIMENSIONAL SYSTEMS;

C (PROGRAMMING LANGUAGE); CALCULATIONS; COMPUTER SIMULATION; GAGES; NANOSHEETS; TENSILE STRAIN;

SILICON CARBIDE;

EID: 79959446436 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.06GE05 Document Type: Article

Times cited : (43)

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