Influence of crystal defects on the piezoresistive properties of 3C-SiC

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2878-2888

  Eickhoff, M ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; GRAIN BOUNDARIES; NANOSTRUCTURED MATERIALS; PIEZOELECTRICITY; POLYCRYSTALLINE MATERIALS; THERMAL EFFECTS;

3C-SIC; CARRIER TRAPPING; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); PIEZORESISTIVITY; TUNNELING CURRENTS;

SILICON CARBIDE;

EID: 4944255215     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775043     Document Type: Article

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