Characterization of highly doped n- and p-type 6H-SiC piezoresistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 785-790

  Okojie, R S ^a,b   Ned, A A ^a   Kurtz, A D ^a   Carr, W N ^c  

^a Kulite Semiconductor Products Inc   (United States)

^b Ford Microelectronics Inc   (United States)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITY SCATTERING; OUTPUT VOLTAGES; PIEZO-RESISTIVE; PIEZORESISTIVE PRESSURE SENSORS; ROOM TEMPERATURE; SCATTERING MECHANISMS; TEMPERATURE DEPENDENCE; WHEATSTONE BRIDGES;

BRIDGE CIRCUITS; ELECTRIC PROPERTIES; GAGES; SCATTERING;

SILICON CARBIDE;

EID: 0006614196     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662776     Document Type: Article

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