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Volumn 135, Issue 2, 2006, Pages 145-149
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High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements
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Author keywords
Doping effect; Piezoresistance; Silicon carbide
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Indexed keywords
CARRIER CONCENTRATION;
PIEZOELECTRICITY;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
SOLID SOLUTIONS;
TEMPERATURE MEASUREMENT;
DOPING LEVELS;
PIEZORESISTANCE COEFFICIENT;
CERAMIC MATERIALS;
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EID: 33750445641
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2006.08.050 Document Type: Article |
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Times cited : (8)
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References (6)
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