First-principles simulation on orientation dependence of piezoresistance properties in silicon nanowires

Japanese Journal of Applied Physics

Volumn 48, Issue 6 PART 2, 2009, Pages

  Nakamura, Koichi ^a   Isono, Yoshitada ^b   Toriyama, Toshiyuki ^a   Sugiyama, Susumu ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES SIMULATIONS; HOLE CONDUCTIVITY; N-TYPE CONDUCTION; NANO SCALE; ORIENTATION DEPENDENCE; P-TYPE; PIEZO-RESISTORS; PIEZORESISTANCE; PIEZORESISTANCE COEFFICIENTS; PIEZORESISTIVE PROPERTIES; SILICON NANOWIRES; SUB-BANDS;

DANGLING BONDS; ELECTRIC WIRE; HOLE MOBILITY; NANOWIRES; SOLID STATE PHYSICS;

NANOTECHNOLOGY;

EID: 70249098465     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.06FG09     Document Type: Article

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