Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires

Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

  Li, Zi An ^a   Mller, Christina ^a   Migunov, Vadim ^a   Spasova, Marina ^a   Farle, Michael ^a   Lysov, Andrey ^a   Gutsche, Christoph ^a   Regolin, Ingo ^a   Prost, Werner ^a   Tegude, Franz Josef ^a   Ercius, Peter ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D RECONSTRUCTION; CROSS SECTION; CRYSTALLOGRAPHIC DIRECTIONS; ELECTRON TOMOGRAPHY; GROWTH DIRECTIONS; INAS; MORPHOLOGICAL CHARACTERIZATION; PLANAR DEFECT; WAFER SUBSTRATES; YOUNG'S MODULUS;

DEFECTS; ELECTRIC IMPEDANCE TOMOGRAPHY; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; SEMICONDUCTING INDIUM; SINGLE CRYSTALS; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ARSENIDE;

EID: 79959426347     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3592186     Document Type: Article

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24. See supplementary material at http://dx.doi.org/10.1063/1.3592186 E-JAPIAU-109-048110 for tomographical visualization of InAs nanowires and discussions of cross-section extraction, missing-wedge effect, and 3D reconstruction resolution.