Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography

Nano Letters

Volumn 7, Issue 10, 2007, Pages 3051-3055

  Verheijen, Marcel A ^a   Algra, Rienk E ^a,b,c   Borgström, Magnus T ^a   Immink, George ^a   Sourty, Erwan ^d   Van Enckevort, Willem J P ^c   Vlieg, Elias ^c   Bakkers, Erik P A M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NETHERLANDS INSTITUTE FOR METALS RESEARCH   (Netherlands)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^d Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; NANOWIRES; SEMICONDUCTING GALLIUM ARSENIDE; THREE DIMENSIONAL; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

GAP NANOWIRE; HETEROSTRUCTURED NANOWIRES; METAL-ORGANIC VAPOR-PHASE EPITAXY; SHELL GROWTH;

GALLIUM PHOSPHIDE;

GALLIUM; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; NANOTUBE; ORGANOARSENIC DERIVATIVE; PHOSPHINE DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; EVALUATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; TEMPERATURE; THREE DIMENSIONAL IMAGING; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

ARSENICALS; COMPUTER SIMULATION; CRYSTALLIZATION; GALLIUM; IMAGING, THREE-DIMENSIONAL; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MICROSCOPY, ELECTRON, TRANSMISSION; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; PHOSPHINES; SURFACE PROPERTIES; TEMPERATURE;

EID: 35748983918     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl071541q     Document Type: Article

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