Experimental demonstration of pattern influence on DRAM SEU and SEFI radiation sensitivities

IEEE Transactions on Nuclear Science

Volumn 58, Issue 3 PART 2, 2011, Pages 1032-1039

  Bougerol, A ^a   Miller, F ^a   Guibbaud, N ^a   Leveugle, R ^b   Carriere, T ^c   Buard, N ^a  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b CNRS   (France)

^c AIRBUS DEFENCE AND SPACE   (Germany)

Author keywords

Bleeddown; dynamic random access memory (DRAM); heavy ion; laser; pattern; proton; SEFLU; single event functional interrupts (SEFI); single event upset (SEU)

Indexed keywords

BLEEDDOWN; DYNAMIC RANDOM-ACCESS MEMORY (DRAM); PATTERN; SEFLU; SINGLE EVENT UPSETS; SINGLE-EVENTS;

RANDOM ERRORS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 79959379987     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2107528     Document Type: Conference Paper

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