Heavy-ion SEE test concept and results for DDR-II memories

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2125-2130

  Harboe Sørensen, Reno ^a,b   Guerre, F X ^c   Lewis, G ^c  

^a IEEE   (Netherlands)

^b EUROPEAN SPACE AGENCY   (Netherlands)

^c Hirex Engineering   (France)

Author keywords

DDR; DDR ii memories; Heavy ion irradiation; Irradiated from the back side; LET corrections; SDRAM; SEE test concept; SEFI; Single event effect testing; Single event upset; Stopping power; Test analysis; Test facilities; Thinned devices

Indexed keywords

HEAVY ION IRRADIATION; SINGLE EVENT EFFECT TESTING; STOPPING POWER; TEST ANALYSIS; THINNED DEVICES;

DYNAMIC RANDOM ACCESS STORAGE; ERROR ANALYSIS; HEAVY IONS; ION BOMBARDMENT; TEST FACILITIES;

STATIC RANDOM ACCESS STORAGE;

EID: 37249048888     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.909747     Document Type: Conference Paper

References (5)

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