메뉴 건너뛰기




Volumn 57, Issue 5 PART 3, 2010, Pages 2923-2928

An approach to single event testing of SDRAMs

Author keywords

Micro displacement; SDRAMs; single event effects; stuck bits

Indexed keywords

GRAPHICAL MAPPINGS; MICRODISPLACEMENT; PATTERN IDENTIFICATION; SDRAM MEMORY; SDRAMS; SINGLE EVENT EFFECTS; SINGLE-EVENT TESTING; SINGLE-EVENTS; STUCK BITS;

EID: 79953794546     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2059711     Document Type: Article
Times cited : (10)

References (10)
  • 2
    • 47849110552 scopus 로고    scopus 로고
    • Proton and heavy ion induced semi-permanent upsets in double data rate SDRAMs
    • R. Koga et al., "Proton and heavy ion induced semi-permanent upsets in double data rate SDRAMs, " in Proc. IEEE Radiation Effects Data Workshop, 2007, pp. 199-203.
    • (2007) Proc. IEEE Radiation Effects Data Workshop , pp. 199-203
    • Koga, R.1
  • 3
    • 58849087596 scopus 로고    scopus 로고
    • Physical mechanisms of ion-induced stuck bits in the Hyundai 16M x 4 SDRAM
    • Dec.
    • L. Edmonds et al., "Physical mechanisms of ion-induced stuck bits in the Hyundai 16M x 4 SDRAM, " IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 3265-3271, Dec. 2008.
    • (2008) IEEE Trans. Nucl. Sci. , vol.55 , Issue.6 , pp. 3265-3271
    • Edmonds, L.1
  • 4
    • 1242287955 scopus 로고    scopus 로고
    • Bulk damage caused by single protons in SDRAMs
    • Dec.
    • H. Shindou et al., "Bulk damage caused by single protons in SDRAMs, " IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1839-1845, Dec. 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , Issue.6 , pp. 1839-1845
    • Shindou, H.1
  • 6
    • 47849095854 scopus 로고    scopus 로고
    • Radiation characterization of 512 Mb SDRAMs
    • L. K. Reed et al., "Radiation characterization of 512 Mb SDRAMs, " in Proc. IEEE Nuclear Science Data Workshop, 2008, pp. 204-207.
    • (2008) Proc. IEEE Nuclear Science Data Workshop , pp. 204-207
    • Reed, L.K.1
  • 7
    • 56349139265 scopus 로고    scopus 로고
    • Investigation of the mechanism of stuck bits in high capacity SDRAMs
    • L. Scheick et al., "Investigation of the mechanism of stuck bits in high capacity SDRAMs, " in Proc. IEEE Nuclear Science Data Workshop, 2008, pp. 47-52.
    • (2008) Proc. IEEE Nuclear Science Data Workshop , pp. 47-52
    • Scheick, L.1
  • 10
    • 33846305725 scopus 로고    scopus 로고
    • Light particle-induced single event degradation in SDRAMs
    • Dec.
    • J. P. David et al., "Light particle-induced single event degradation in SDRAMs, " IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3544-3550, Dec. 2006.
    • (2006) IEEE Trans. Nucl. Sci. , vol.53 , Issue.6 , pp. 3544-3550
    • David, J.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.