Measuring the heat evolved from individual reaction steps in atomic layer deposition

Journal of Thermal Analysis and Calorimetry

Volumn 105, Issue 1, 2011, Pages 33-37

  Nilsen, O ^a   Fjellvag H ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

ALCVD; ALD; ALE; Energetic; Thermopile

Indexed keywords

ALCVD; ALD; ALD GROWTH; ALE; COMPLEMENTARY TOOLS; ENERGETIC; GROWTH CYCLE; HEAT OF REACTION; IN-SITU CHARACTERIZATION; REACTION STEPS; SURFACE TEMPERATURES; THERMOPILE SENSORS;

ATOMIC LAYER DEPOSITION; KETONES; PHENOLS; SENSORS; TERNARY SYSTEMS; THERMOCOUPLES;

FILM GROWTH;

EID: 79959372922     PISSN: 13886150     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10973-011-1630-6     Document Type: Article

References (24)

1. Ritala M, Leskelä M. In: Nalwa HS, editor. Handbook of thin film materials, vol. 1. San Diego: Academic Press; 2001. p. 103-59.
2. RL Puurunen 2005 Surface chemistry of atomic layer deposition: a case study for the trimethylaluminum/water process J Appl Phys 97 121301/1 121301/52 10.1063/1.1940727 1:CAS:528:DC%2BD2MXlvVektro%3D (Pubitemid 40940570)
3. Pakkala A, Putkonen M. In: Bunshah RF, editor. Handbook of deposition technologies for films and coatings, vol. 1. 2nd ed. Burlington: Elsevier; 2010. p. 364-91.
4. MN Rocklein SM George 2003 Temperature-induced apparent mass changes observed during quartz crystal microbalance measurements of atomic layer deposition Anal Chem 75 4975 4982 10.1021/ac030141u 1:CAS:528: DC%2BD3sXms1eqs78%3D (Pubitemid 37238547)
5. JW Elam MD Groner SM George 2002 Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition Rev Sci Instrum 73 2981 2987 10.1063/1.1490410 1:CAS:528:DC%2BD38Xls1Wjtr4%3D (Pubitemid 34946326)
6. R Matero A Rahtu M Ritala 2001 In situ quadrupole mass spectrometry and quartz crystal microbalance studies on the atomic layer deposition of titanium dioxide from titanium tetrachloride and water Chem Mater 13 4506 4511 10.1021/cm011046+ 1:CAS:528:DC%2BD3MXoslSgtLk%3D
7. A Rahtu M Ritala 2000 Integration of a quadrupole mass spectrometer and a quartz crystal microbalance for in situ characterization of atomic layer deposition processes in flow type reactors Proc Electrochem Soc 2000-13 105 111
8. E Bellandi B Crivelli A Elbaz M Alessandri P Boher C Defranoux 2003 Optical characterisation of high-κ materials deposited by ALCVD Proc Electrochem Soc 2003-3 316 321
9. A Rosental P Adamson A Gerst A Niilisk 1996 Monitoring of atomic layer deposition by incremental dielectric reflection Appl Surf Sci 107 178 183 10.1016/S0169-4332(96)00483-7 1:CAS:528:DyaK28Xms1aru7k%3D (Pubitemid 126364927)
10. K Nishi A Usui H Sakaki 1993 In situ optical characterization of gallium arsenide and indium phosphide surfaces during chloride atomic layer epitaxy Thin Solid Films 225 1-2 47 52 10.1016/0040-6090(93)90124-8 1:CAS:528: DyaK3sXisVWmtrg%3D
11. N Kobayashi Y Kobayashi 1993 In situ monitoring and control of atomic layer epitaxy by surface photo-absorption Thin Solid Films 225 1-2 32 39 10.1016/0040-6090(93)90122-6 1:CAS:528:DyaK3sXisVWmtro%3D
12. L Henn-Lecordier W Lei M Anderle GW Rubloff 2007 Real-time sensing and metrology for atomic layer deposition processes and manufacturing J Vac Sci Technol B 25 130 139 10.1116/1.2429672 1:CAS:528:DC%2BD2sXhsF2ltLg%3D (Pubitemid 46512015)
13. A Koukitu T Kumagai T Taki H Seki 1999 Halogen-transport atomic-layer epitaxy of cubic GaN monitored by in situ gravimetric method Jpn J Appl Phys 38 4980 4982 10.1143/JJAP.38.4980 1:CAS:528:DyaK1MXmt1equrc%3D (Pubitemid 30505584)
14. 2O in a binary reaction sequence Surf Sci 322 230 242 10.1016/0039-6028(95)90033-0 1:CAS:528:DyaK2MXjtFSltLo%3D
15. RG Bankras J Holleman J Schmitz 2005 In situ RHEED of atomic layer deposition Proc Electrochem Soc 2005-09 555 562 (Pubitemid 43176536)
16. Langereis E, Heil SBS, van de Sanden MCM, Kessels WMM. In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition. J Appl Phys. 2006;100:023534/1-10.
17. 2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering. Appl Phys Lett. 2005;86:031906/1-3.
18. M Schuisky JW Elam SM George 2002 In situ resistivity measurements during the atomic layer deposition of ZnO and W thin films Appl Phys Lett 81 180 182 10.1063/1.1490413 1:CAS:528:DC%2BD38XkvFOku78%3D (Pubitemid 34783742)
19. K Kodama M Ozeki Y Sakuma K Mochizuki N Ohtsuka 1990 In situ X-ray photoemission spectroscopy for atomic layer epitaxy of indium phosphide and gallium arsenide J Cryst Growth 99 535 539 10.1016/0022-0248(90)90578-9 1:CAS:528:DyaK3cXktFGjtr0%3D (Pubitemid 20687353)
20. O Nilsen B KlepperK H∅ Nielsen H Fjellvåg 2008 Deposition of organic-inorganic hybrid materials by atomic layer deposition ECS Trans 16 3 15 10.1149/1.2979975 1:CAS:528:DC%2BD1MXhtlOktw%3D%3D
21. Dean, John A. Lange's handbook of chemistry. 12th ed. New York: McGraw-Hill; 1979. p. 94-994.
22. WE Kurt TC Alan 1972 Reaction of group III metal alkyls in gas phase. VI. The addition of ethylene to trimethylaluminium J Am Chem Soc 94 1810 1815 10.1021/ja00761a003
23. 3 J Appl Crystallogr 20 79 83 10.1107/S0021889887087090 1:CAS:528:DyaL2sXitVGlsbo%3D
24. JW Elam MJ Pellin 2005 GaPO4 sensors for gravimetric monitoring during atomic layer deposition at high temperatures Anal Chem 77 3531 3535 10.1021/ac050349a 1:CAS:528:DC%2BD2MXjtl2gsb4%3D (Pubitemid 40799842)