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Applied Surface Science

Volumn 255, Issue 16, 2009, Pages 7121-7125

Passivation of GaSb and InAs by pH-activated thioacetamide

(4) Stine, R a Aifer, E H a Whitman, L J a Petrovykh, D Y a,b

a NAVAL RESEARCH LABORATORY (United States)

b Bldg 142 (United States)

Author keywords

Gallium antimonide; Indium arsenide; Oxidation; Passivation; Thioacetamide; X ray photoelectron spectroscopy

Indexed keywords

III-V SEMICONDUCTORS; INDIUM ARSENIDE; NARROW BAND GAP SEMICONDUCTORS; OXIDATION; PASSIVATION; PHOTOELECTRONS; PHOTONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR SUPERLATTICES; SULFUR COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

BASIC CONDITIONS; COMPARATIVE STUDIES; GALLIUM ANTIMONIDE; III-V MATERIALS; PASSIVATED SURFACE; REACTION CONDITIONS; THIOACETAMIDE; TYPE-II SUPERLATTICES;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 67349167660 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2009.03.010 Document Type: Article

Times cited : (22)

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