A new smart device array structure for statistical investigations of BTI degradation and recovery

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Schlunder C ^a   Berthold, J M ^a   Hoffmann, M ^a   Weigmann, J M ^a   Gustin, W ^a   Reisinger, H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; CRITICAL DEVICE; LIMITING FACTORS; SINGLE DEFECT; SMART DEVICES;

CMOS INTEGRATED CIRCUITS; DEGRADATION; INVESTMENTS;

INTEGRATED CIRCUITS;

EID: 79959319431     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784452     Document Type: Conference Paper

References (14)

1. Jeppson, K.O. and Svensson, C.M., "Negative bias stress of MOS devices at high electric fields and ...", J. Appl. Phys., 48#5, 1977. p. 2004
2. Harris, H.R.; et al., "Recovery of NBTI degradation in HfSiON/metal gate transistors", IRW 2007, pp. 132-135
3. Grasser, T., et al., "Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Inst...", IEDM 2009, pp. 729-732
4. Haggag, A.; et al., "Generalized Models for Optimization of BTI in SiON and High-K Dielectrics", IRPS 2006, pp. 665-666
5. Nigam, T.; et al., "Accurate product lifetime predictions based on device-level measurements", IRPS 2009. pp. 634-639
6. Mahapatra; S., et al., "On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Process..", IRPS 07, p. 1
7. Grasser, T., et al., "The Time Dependent Defect Spectroscopy (TDDS) for the Characteriza-tion of the Bias Temperature Instability", IRPS 2010
8. Reisinger, H., et al., "The statistical analysis of individual defects constituting NBTI and its implications for modelling, IRPS 2010
9. Fischer, T.; et al., "A 65nm test structure for the analysis of NBTI induced statistical variation in SRAM transistors" ESSDERC 2008, pp. 51-54
10. Drapatz, S.; et al., "Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation", ESSDERC 2009, pp. 93-96
11. Hofmann, K.; et al., "A comprehensive analysis of NFET degradation due to off-state stress", IRW 2004, pp. 94-98
12. Muehlhoff, A., "An Extrapolation Model for Lifetime Prediction for Off-State Degradation of MOS-FETs, J. Micr. Reliability, 41, 1289 (2001)
13. Schlünder, C., et al., "A novel multi-point NBTI Characterization Methodology using Smart Intermediate Stress (SIS)", IRPS 2007, pp. 79-86
14. Reisinger, H., et al., "Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT-measurements", IRPS 2006, pp. 448-453