An extrapolation model for lifetime prediction for off-state - Degradation of MOS-FETs

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1289-1293

  Muehlhoff, A ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EXTRAPOLATION; HOT CARRIERS; LIFE CYCLE; MATHEMATICAL MODELS; RELIABILITY;

OFF-STATE OPERATIONS;

MOSFET DEVICES;

EID: 0035456681     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00176-7     Document Type: Article

References (3)

1. M. Takeda, C.Y. Yang, A. Miura-Hamada "Hot Carrier Effects in MOS Devices", Academic Press, 1995, pp 49
2. R. Paul "MOS-Feldeffekttransistoren", Springer, 1994, pp 155
3. M. Ohring "Reliability and Failure of Electronic Materials and Devices", Academic Press, 1998, p331